Fairchild Semiconductor ISL9V5036S3ST, Type N-Channel IGBT, 46 A 390 V, 3-Pin TO-263, Surface
- RS Stock No.:
- 862-9362
- Mfr. Part No.:
- ISL9V5036S3ST
- Manufacturer:
- Fairchild Semiconductor
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP1,358.28
(exc. VAT)
PHP1,521.275
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 800 unit(s) shipping from September 02, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP271.656 | PHP1,358.28 |
| 25 - 95 | PHP253.594 | PHP1,267.97 |
| 100 - 245 | PHP228.31 | PHP1,141.55 |
| 250 - 495 | PHP219.134 | PHP1,095.67 |
| 500 + | PHP204.818 | PHP1,024.09 |
*price indicative
- RS Stock No.:
- 862-9362
- Mfr. Part No.:
- ISL9V5036S3ST
- Manufacturer:
- Fairchild Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fairchild Semiconductor | |
| Maximum Continuous Collector Current Ic | 46A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 390V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±10 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | EcoSPARK | |
| Energy Rating | 500mJ | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Fairchild Semiconductor | ||
Maximum Continuous Collector Current Ic 46A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 390V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±10 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Series EcoSPARK | ||
Energy Rating 500mJ | ||
Automotive Standard AEC-Q101 | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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