onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount

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Subtotal (1 pack of 5 units)*

PHP545.69

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PHP611.175

(inc. VAT)

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5 - 20PHP109.138PHP545.69
25 - 95PHP106.956PHP534.78
100 - 245PHP104.816PHP524.08
250 - 495PHP102.724PHP513.62
500 +PHP100.672PHP503.36

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Packaging Options:
RS Stock No.:
862-9347
Mfr. Part No.:
ISL9V2040D3ST
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

10 A

Maximum Collector Emitter Voltage

450 V

Maximum Gate Emitter Voltage

±14V

Maximum Power Dissipation

130 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-40 °C

Discrete IGBTs, Fairchild Semiconductor


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IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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