Specifications

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Select all	Attribute	Value
	Brand	onsemi
	Maximum Continuous Collector Current Ic	21A
	Product Type	Ignition IGBT
	Maximum Collector Emitter Voltage Vceo	430V
	Maximum Power Dissipation Pd	150W
	Package Type	TO-252
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	3
	Switching Speed	1MHz
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.2V
	Maximum Gate Emitter Voltage VGEO	±10 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Series	EcoSPARK
	Energy Rating	300mJ
	Automotive Standard	AEC-Q101

	Select all
	Brand onsemi
	Maximum Continuous Collector Current Ic 21A
	Product Type Ignition IGBT
	Maximum Collector Emitter Voltage Vceo 430V
	Maximum Power Dissipation Pd 150W
	Package Type TO-252
	Mount Type Surface
	Channel Type Type N
	Pin Count 3
	Switching Speed 1MHz
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
	Maximum Gate Emitter Voltage VGEO ±10 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Series EcoSPARK
	Energy Rating 300mJ
	Automotive Standard AEC-Q101

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

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