STMicroelectronics STGF14NC60KD IGBT, 11 A 600 V, 3-Pin TO-220FP, Through Hole

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Subtotal (1 pack of 5 units)*

PHP701.68

(exc. VAT)

PHP785.88

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 20PHP140.336PHP701.68
25 - 95PHP126.308PHP631.54
100 - 245PHP113.678PHP568.39
250 - 495PHP102.308PHP511.54
500 +PHP92.078PHP460.39

*price indicative

Packaging Options:
RS Stock No.:
795-9072
Mfr. Part No.:
STGF14NC60KD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

11 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

28 W

Package Type

TO-220FP

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

10.4 x 4.6 x 16.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

IGBT Discretes, STMicroelectronics


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IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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