Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V
- RS Stock No.:
- 244-5404
- Mfr. Part No.:
- FS150R12KT3BOSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
PHP9,405.26
(exc. VAT)
PHP10,533.89
(inc. VAT)
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In Stock
- Plus 7 unit(s) shipping from December 22, 2025
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Units | Per Unit |
|---|---|
| 1 - 1 | PHP9,405.26 |
| 2 - 2 | PHP9,216.99 |
| 3 - 3 | PHP9,032.85 |
| 4 - 4 | PHP8,852.32 |
| 5 + | PHP8,674.90 |
*price indicative
- RS Stock No.:
- 244-5404
- Mfr. Part No.:
- FS150R12KT3BOSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Maximum Power Dissipation | 700 W | |
| Number of Transistors | 6 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Maximum Power Dissipation 700 W | ||
Number of Transistors 6 | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.15 V, gate threshold voltage is 6.5 V.
Collector-emitter cut-off current 5.0 mA
Temperature under switching conditions 125° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.40 nF
Temperature under switching conditions 125° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.40 nF
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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