Infineon FS150R12KE3BOSA1 3 Phase Bridge IGBT Module, 200 A 1200 V AG-ECONO3-4, Panel Mount

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PHP9,260.89

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RS Stock No.:
111-6090
Mfr. Part No.:
FS150R12KE3BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

200 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

700 W

Package Type

AG-ECONO3-4

Configuration

3 Phase Bridge

Mounting Type

Panel Mount

Channel Type

N

Transistor Configuration

3 Phase

Dimensions

122 x 62 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+125 °C

RoHS Status: Not Applicable

IGBT Modules, Infineon


The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.

Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4


IGBT Discretes & Modules, Infineon


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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