Infineon IGB50N65H5ATMA1 IGBT, 80 A 650 V, 3-Pin TO-263

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Subtotal (1 pack of 5 units)*

PHP1,152.48

(exc. VAT)

PHP1,290.78

(inc. VAT)

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Units
Per Unit
Per Pack*
5 - 5PHP230.496PHP1,152.48
10 - 95PHP211.122PHP1,055.61
100 - 245PHP194.926PHP974.63
250 - 495PHP181.044PHP905.22
500 +PHP176.13PHP880.65

*price indicative

Packaging Options:
RS Stock No.:
218-4390
Mfr. Part No.:
IGB50N65H5ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

1

Maximum Power Dissipation

270 W

Package Type

TO-263

Channel Type

N

Pin Count

3

The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 80 A.

Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.


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