Infineon IKW30N65H5XKSA1 IGBT, 55 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6671
- Mfr. Part No.:
- IKW30N65H5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
PHP4,562.88
(exc. VAT)
PHP5,110.44
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 60 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 60 | PHP152.096 | PHP4,562.88 |
| 90 - 120 | PHP146.002 | PHP4,380.06 |
| 150 + | PHP142.204 | PHP4,266.12 |
*price indicative
- RS Stock No.:
- 215-6671
- Mfr. Part No.:
- IKW30N65H5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 55 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 188 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 55 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 188 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon 650v duopack insulated-gate bipolar transistor is a diode of fifth generation high speed switching series.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
Related links
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