Infineon IGW30N65L5XKSA1 IGBT, 85 A 650 V, 3-Pin PG-TO247-3
- RS Stock No.:
- 215-6633
- Mfr. Part No.:
- IGW30N65L5XKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 30 units)*
PHP4,433.52
(exc. VAT)
PHP4,965.54
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 180 unit(s) shipping from December 22, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 30 - 60 | PHP147.784 | PHP4,433.52 |
| 90 - 120 | PHP141.872 | PHP4,256.16 |
| 150 + | PHP138.168 | PHP4,145.04 |
*price indicative
- RS Stock No.:
- 215-6633
- Mfr. Part No.:
- IGW30N65L5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 85 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20 V, ±30 V | |
| Maximum Power Dissipation | 227 W | |
| Package Type | PG-TO247-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 85 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20 V, ±30 V | ||
Maximum Power Dissipation 227 W | ||
Package Type PG-TO247-3 | ||
Pin Count 3 | ||
The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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