Infineon IGW30N65L5XKSA1, Type N-Channel IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole
- RS Stock No.:
- 215-6634
- Mfr. Part No.:
- IGW30N65L5XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP1,162.61
(exc. VAT)
PHP1,302.125
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 190 unit(s) shipping from March 23, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP232.522 | PHP1,162.61 |
| 10 - 95 | PHP213.306 | PHP1,066.53 |
| 100 - 245 | PHP196.898 | PHP984.49 |
| 250 - 495 | PHP182.832 | PHP914.16 |
| 500 + | PHP177.678 | PHP888.39 |
*price indicative
- RS Stock No.:
- 215-6634
- Mfr. Part No.:
- IGW30N65L5XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 85A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 227W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | LowVCE(sat) Fifth Generation | |
| Standards/Approvals | Pb-free lead plating, RoHS, JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 85A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 227W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series LowVCE(sat) Fifth Generation | ||
Standards/Approvals Pb-free lead plating, RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
- Infineon 85 A 650 V Through Hole
- Infineon IKZ50N65EH5XKSA1 85 A 650 V Through Hole
- Infineon 85 A 650 V Through Hole
- Infineon 85 A 650 V Through Hole
- Infineon IKW30N65EL5XKSA1 85 A 650 V Through Hole
- STMicroelectronics 85 A 1600 V Through Hole
- STMicroelectronics STGWA30IH160DF2 85 A 1600 V Through Hole
- Infineon 60 A 650 V Through Hole