Infineon IGB15N60TATMA1 IGBT, 26 A 600 V, 3-Pin PG-TO263-3
- RS Stock No.:
- 215-6628
- Mfr. Part No.:
- IGB15N60TATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
PHP552.72
(exc. VAT)
PHP619.045
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2,935 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 5 | PHP110.544 | PHP552.72 |
| 10 - 95 | PHP101.246 | PHP506.23 |
| 100 - 245 | PHP93.502 | PHP467.51 |
| 250 - 495 | PHP86.786 | PHP433.93 |
| 500 + | PHP84.46 | PHP422.30 |
*price indicative
- RS Stock No.:
- 215-6628
- Mfr. Part No.:
- IGB15N60TATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 26 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 130 W | |
| Package Type | PG-TO263-3 | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 26 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 130 W | ||
Package Type PG-TO263-3 | ||
Pin Count 3 | ||
The Infineon low loss insulated-gate bipolar transistor with fieldstop technology.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
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