STMicroelectronics STGWT80H65FB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

This image is representative of the product range

View all IGBTs
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
168-8742
Mfr. Part No.:
STGWT80H65FB
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

120 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

469 W

Package Type

TO-3P

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5 x 20.1mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
KR

IGBT Discretes, STMicroelectronics


For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Related links