IXYS IXA27IF1200HJ, Type N-Channel IGBT, 3-Pin ISOPLUS247
- RS Stock No.:
- 168-4768
- Mfr. Part No.:
- IXA27IF1200HJ
- Manufacturer:
- IXYS
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 168-4768
- Mfr. Part No.:
- IXA27IF1200HJ
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | IGBT | |
| Package Type | ISOPLUS247 | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type IGBT | ||
Package Type ISOPLUS247 | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
- COO (Country of Origin):
- US
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- IXYS IXA37IF1200HJ 58 A 1200 V PCB
- IXYS 58 A 1200 V PCB
- IXYS HiperFET 45 A 3-Pin ISOPLUS247
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin ISOPLUS247
- IXYS Polar HiPerFET Type N-Channel MOSFET 300 V Enhancement, 3-Pin ISOPLUS247
- IXYS HiperFET 25 A 3-Pin ISOPLUS247
- IXYS HiperFET 18 A 3-Pin ISOPLUS247
- IXYS HiperFET 10 A 3-Pin ISOPLUS247