Renesas Electronics HIP2101EIBZ MOSFET Gate Driver, 3 A 8-Pin 100V, SOIC
- RS Stock No.:
- 264-0589P
- Mfr. Part No.:
- HIP2101EIBZ
- Manufacturer:
- Renesas Electronics
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
PHP3,993.05
(exc. VAT)
PHP4,472.22
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- 888 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 10 - 48 | PHP399.305 |
| 50 - 98 | PHP387.325 |
| 100 - 248 | PHP375.695 |
| 250 + | PHP364.425 |
*price indicative
- RS Stock No.:
- 264-0589P
- Mfr. Part No.:
- HIP2101EIBZ
- Manufacturer:
- Renesas Electronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Renesas Electronics | |
| Product Type | Gate Driver Module | |
| Output Current | 3A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 10ns | |
| Driver Type | MOSFET | |
| Rise Time | 10ns | |
| Minimum Supply Voltage | 100V | |
| Maximum Supply Voltage | 100V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | HIP2101 | |
| Standards/Approvals | RoHS | |
| Height | 1.7mm | |
| Width | 3.98mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Renesas Electronics | ||
Product Type Gate Driver Module | ||
Output Current 3A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 10ns | ||
Driver Type MOSFET | ||
Rise Time 10ns | ||
Minimum Supply Voltage 100V | ||
Maximum Supply Voltage 100V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series HIP2101 | ||
Standards/Approvals RoHS | ||
Height 1.7mm | ||
Width 3.98mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Renesas Electronics gate drivers is a high frequency half-bridge NMOS FET driver with a tri-level PWM input with an operating supply and integrated high-side bootstrap bias, it supports driving the high-side and low-side NMOS in halfbridge applications.
Programmable dead-time prevents shoot-through
Bi-directional converter
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