Infineon MOSFET Gate Driver 2, 360 mA 8-Pin 600 V, DSO
- RS Stock No.:
- 226-6032
- Mfr. Part No.:
- 2ED2304S06FXUMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 reel of 2500 units)*
PHP100,512.50
(exc. VAT)
PHP112,575.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,500 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 + | PHP40.205 | PHP100,512.50 |
*price indicative
- RS Stock No.:
- 226-6032
- Mfr. Part No.:
- 2ED2304S06FXUMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 360mA | |
| Pin Count | 8 | |
| Package Type | DSO | |
| Fall Time | 40ns | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 48ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 600V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 5mm | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Standards/Approvals | RoHS | |
| Series | 2ED2304S06F | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Gate Driver | ||
Output Current 360mA | ||
Pin Count 8 | ||
Package Type DSO | ||
Fall Time 40ns | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 48ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 600V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 5mm | ||
Height 1.75mm | ||
Width 4 mm | ||
Standards/Approvals RoHS | ||
Series 2ED2304S06F | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 2ED2304S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode
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