Infineon 1EDS5663HXUMA1, 8 A, 4V 16-Pin, PG-DSO-16-30

The Infineon new single-channel galvanic ally isolated gate driver IC component 1EDS5663H is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.

Low ohmic outputs
Single-channel galvanic isolation
Integrated galvanic isolation

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