onsemi, IGBT 2, 1.9 A 8-Pin 20 V, SOIC
- RS Stock No.:
- 221-6667
- Mfr. Part No.:
- NCV57201DR2G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2500 units)*
PHP127,970.00
(exc. VAT)
PHP143,327.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from June 19, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP51.188 | PHP127,970.00 |
| 5000 - 5000 | PHP49.219 | PHP123,047.50 |
| 7500 + | PHP48.596 | PHP121,490.00 |
*price indicative
- RS Stock No.:
- 221-6667
- Mfr. Part No.:
- NCV57201DR2G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Driver Type | IGBT | |
| Number of Outputs | 2 | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 1.75mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT Module | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Driver Type IGBT | ||
Number of Outputs 2 | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 1.75mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4 mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCx57201 is a high voltage gate driver with one non−isolated low side gate driver and one galvanically isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. It isolated high side driver can be powered with an isolated power supply or with bootstrap technique from the low side power supply. The galvanic isolation for the high side gate driver guarantees reliable switching in high power applications for IGBTs that operate up to 800 V, at high dv/dt.
Matched propagation delay 90 ns
Built−in 20 ns minimum pulse width filter
Non−inverting output signal
CMTI up to 100 kV/s
Reliable operation for VS negative swing to −800 V
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