Renesas Electronics HIP2101IBZ MOSFET Gate Driver 2, 2 A 8-Pin 14 V, SOIC

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Subtotal (1 tube of 98 units)*

PHP28,021.532

(exc. VAT)

PHP31,384.108

(inc. VAT)

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Last RS stock
  • Final 686 unit(s), ready to ship from another location
Units
Per Unit
Per Tube*
98 - 98PHP285.934PHP28,021.53
196 - 196PHP260.214PHP25,500.97
294 - 490PHP250.137PHP24,513.43
588 - 980PHP233.052PHP22,839.10
1078 +PHP206.598PHP20,246.60

*price indicative

RS Stock No.:
196-8875
Mfr. Part No.:
HIP2101IBZ
Manufacturer:
Renesas Electronics
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Brand

Renesas Electronics

Product Type

MOSFET

Output Current

2A

Pin Count

8

Package Type

SOIC

Fall Time

500ns

Driver Type

MOSFET

Number of Outputs

2

Rise Time

500ns

Minimum Supply Voltage

18V

Maximum Supply Voltage

14V

Number of Drivers

2

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Width

4 mm

Series

HIP2101

Height

1.75mm

Standards/Approvals

No

Length

5mm

Mount Type

Surface

Automotive Standard

No

The Renesas Electronics' HIP2101 series device are a high frequency, 100V Half Bridge N-Channel power MOSFET driver IC. It is equivalent to the

HIP2100 with the added advantage of full TTL/CMOS compatible logic input pins. Under voltage protection on both the

low-side and high-side supplies force the outputs low. An on-chip diode eliminates the discrete diode required with other driver ICs.

Drives N-Channel MOSFET Half Bridge

SOIC, EPSOIC, QFN and DFN Package Options

Bootstrap Supply Max Voltage to 114VDC

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