Infineon 16 kB Serial-SPI Serial (SPI) Automotive FRAM 8-Pin SOIC-8, FM25C160B-G
- RS Stock No.:
- 273-7384
- Mfr. Part No.:
- FM25C160B-G
- Manufacturer:
- Infineon
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Subtotal (1 tube of 97 units)*
PHP10,227.583
(exc. VAT)
PHP11,454.924
(inc. VAT)
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- 1,843 unit(s) ready to ship from another location
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Units | Per Unit | Per Tube* |
|---|---|---|
| 97 - 97 | PHP105.439 | PHP10,227.58 |
| 194 + | PHP92.093 | PHP8,933.02 |
*price indicative
- RS Stock No.:
- 273-7384
- Mfr. Part No.:
- FM25C160B-G
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 16kB | |
| Product Type | Serial (SPI) Automotive FRAM | |
| Organisation | 2k x 8 bit | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 15MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 125°C | |
| Minimum Supply Voltage | 4.5V | |
| Number of Words | 2k | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | 40°C | |
| Number of Bits per Word | 8 | |
| Automotive Standard | AEC-Q100 Grade 1 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 16kB | ||
Product Type Serial (SPI) Automotive FRAM | ||
Organisation 2k x 8 bit | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 15MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 125°C | ||
Minimum Supply Voltage 4.5V | ||
Number of Words 2k | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature 40°C | ||
Number of Bits per Word 8 | ||
Automotive Standard AEC-Q100 Grade 1 | ||
- COO (Country of Origin):
- TH
The Infineon FRAM is a 16 Kbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
AEC Q100 Grade 1 compliant
Very fast serial peripheral interface
Sophisticated write protection scheme
High endurance 10 trillion read and write
Advanced high reliability ferroelectric process
Related links
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