Infineon 64 kB 2 Wire I2C FRAM 8-Pin SOIC

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Subtotal (1 tube of 97 units)*

PHP13,042.232

(exc. VAT)

PHP14,607.327

(inc. VAT)

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  • 1,455 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
97 - 97PHP134.456PHP13,042.23
194 - 485PHP130.422PHP12,650.93
582 - 970PHP125.205PHP12,144.89
1067 +PHP118.945PHP11,537.67

*price indicative

RS Stock No.:
188-5402
Mfr. Part No.:
FM24CL64B-G
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

64kB

Organisation

8K x 8 bit

Interface Type

2 Wire I2C

Data Bus Width

8bit

Maximum Random Access Time

550ns

Maximum Clock Frequency

1MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Height

1.38mm

Width

3.98 mm

Length

4.97mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Maximum Supply Voltage

3.65V

Minimum Supply Voltage

2.7V

Automotive Standard

AEC-Q100

Number of Words

8K

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

COO (Country of Origin):
US

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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