Infineon 4Mbit Serial-SPI FRAM Memory 8-Pin DFN, CY15B104Q-LHXI
- RS Stock No.:
- 181-1574P
- Mfr. Part No.:
- CY15B104Q-LHXI
- Manufacturer:
- Infineon
Bulk discount available
Subtotal 10 units (supplied in a tube)*
PHP14,847.20
(exc. VAT)
PHP16,628.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 262 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 10 - 24 | PHP1,484.72 |
| 25 - 49 | PHP1,433.74 |
| 50 - 99 | PHP1,418.56 |
| 100 + | PHP1,383.85 |
*price indicative
- RS Stock No.:
- 181-1574P
- Mfr. Part No.:
- CY15B104Q-LHXI
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Memory Size | 4Mbit | |
| Organisation | 512 kB x 8 | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 16ns | |
| Mounting Type | Surface Mount | |
| Package Type | DFN | |
| Pin Count | 8 | |
| Dimensions | 6 x 5 x 0.7mm | |
| Length | 5mm | |
| Width | 6mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Height | 0.7mm | |
| Maximum Operating Temperature | +85 °C | |
| Minimum Operating Supply Voltage | 2 V | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Number of Words | 512K | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Memory Size 4Mbit | ||
Organisation 512 kB x 8 | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 16ns | ||
Mounting Type Surface Mount | ||
Package Type DFN | ||
Pin Count 8 | ||
Dimensions 6 x 5 x 0.7mm | ||
Length 5mm | ||
Width 6mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Height 0.7mm | ||
Maximum Operating Temperature +85 °C | ||
Minimum Operating Supply Voltage 2 V | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Number of Words 512K | ||
4-Mbit ferroelectric random access memory (F-RAM) logically
organized as 512 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 A active current at 1 MHz
100 A (typ) standby current
3 A (typ) sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (TDFN) package
organized as 512 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Very fast serial peripheral interface (SPI)
Up to 40-MHz frequency
Direct hardware replacement for serial flash and EEPROM
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable instruction
Software block protection for 1/4, 1/2, or entire array
Device ID
Manufacturer ID and Product ID
Low power consumption
300 A active current at 1 MHz
100 A (typ) standby current
3 A (typ) sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
Packages
8-pin small outline integrated circuit (SOIC) package
8-pin thin dual flat no leads (TDFN) package