Infineon 2 MB SPI FRAM 8-Pin SOIC, FM25V20A-G

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PHP1,133.27

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PHP1,269.26

(inc. VAT)

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  • 11 unit(s) ready to ship from another location
  • Plus 183 unit(s) shipping from February 10, 2026
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Per Unit
1 - 9PHP1,133.27
10 - 24PHP1,099.28
25 - 99PHP1,066.29
100 - 499PHP1,034.30
500 +PHP1,003.27

*price indicative

Packaging Options:
RS Stock No.:
124-2990
Mfr. Part No.:
FM25V20A-G
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

2MB

Organisation

256k x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Maximum Clock Frequency

40MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Width

3.98 mm

Length

4.97mm

Height

1.38mm

Standards/Approvals

No

Maximum Operating Temperature

85°C

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2V

Automotive Standard

AEC-Q100

Number of Words

256K

COO (Country of Origin):
TH

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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