Infineon 128 kB SPI FRAM 8-Pin SOIC, FM25V01A-G

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Subtotal (1 pack of 2 units)*

PHP677.38

(exc. VAT)

PHP758.66

(inc. VAT)

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In Stock
  • 1,246 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP338.69PHP677.38
10 - 18PHP330.225PHP660.45
20 - 98PHP321.965PHP643.93
100 - 498PHP313.915PHP627.83
500 +PHP306.065PHP612.13

*price indicative

Packaging Options:
RS Stock No.:
124-2985
Mfr. Part No.:
FM25V01A-G
Manufacturer:
Infineon
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Brand

Infineon

Product Type

FRAM

Memory Size

128kB

Organisation

16k x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mount Type

Surface

Maximum Clock Frequency

40MHz

Package Type

SOIC

Pin Count

8

Standards/Approvals

No

Length

4.97mm

Height

1.38mm

Width

3.98 mm

Maximum Operating Temperature

85°C

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

Maximum Supply Voltage

3.6V

Number of Words

16k

Minimum Supply Voltage

2V

Automotive Standard

AEC-Q100

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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