Infineon 4 MB SPI FRAM 8-Pin SOIC, CY15B104Q-SXI

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Subtotal (1 unit)*

PHP1,554.60

(exc. VAT)

PHP1,741.15

(inc. VAT)

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  • 711 unit(s) shipping from February 09, 2026
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Per Unit
1 - 4PHP1,554.60
5 - 9PHP1,507.96
10 - 49PHP1,462.72
50 - 187PHP1,418.83
188 +PHP1,376.27

*price indicative

Packaging Options:
RS Stock No.:
124-2933
Mfr. Part No.:
CY15B104Q-SXI
Manufacturer:
Infineon
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Brand

Infineon

Memory Size

4MB

Product Type

FRAM

Organisation

512 k x 8 Bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

16ns

Mount Type

Surface

Maximum Clock Frequency

40MHz

Package Type

SOIC

Pin Count

8

Length

5.3mm

Width

5.3 mm

Standards/Approvals

No

Height

1.78mm

Maximum Operating Temperature

85°C

Minimum Operating Temperature

-40°C

Number of Bits per Word

8

Maximum Supply Voltage

3.6V

Minimum Supply Voltage

2V

Automotive Standard

No

Number of Words

512K

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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