Infineon NOR 256 MB CFI Flash Memory 64-Pin BGA
- RS Stock No.:
- 193-8867P
- Mfr. Part No.:
- S29GL256P11FFIV20
- Manufacturer:
- Infineon
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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 193-8867P
- Mfr. Part No.:
- S29GL256P11FFIV20
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Flash Memory | |
| Memory Size | 256MB | |
| Interface Type | CFI | |
| Package Type | BGA | |
| Pin Count | 64 | |
| Organisation | 32M x 8 bit | |
| Mount Type | Surface | |
| Cell Type | NOR | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.7V | |
| Timing Type | Asynchronous | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Height | 1mm | |
| Width | 11mm | |
| Standards/Approvals | No | |
| Length | 13mm | |
| Automotive Standard | No | |
| Number of Bits per Word | 8 | |
| Series | S29GL256P | |
| Number of Words | 32M | |
| Maximum Random Access Time | 110ns | |
| Supply Current | 110mA | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Flash Memory | ||
Memory Size 256MB | ||
Interface Type CFI | ||
Package Type BGA | ||
Pin Count 64 | ||
Organisation 32M x 8 bit | ||
Mount Type Surface | ||
Cell Type NOR | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.7V | ||
Timing Type Asynchronous | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Height 1mm | ||
Width 11mm | ||
Standards/Approvals No | ||
Length 13mm | ||
Automotive Standard No | ||
Number of Bits per Word 8 | ||
Series S29GL256P | ||
Number of Words 32M | ||
Maximum Random Access Time 110ns | ||
Supply Current 110mA | ||
- COO (Country of Origin):
- US
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
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