Winbond SLC NAND 2 GB Parallel Flash Memory 63-Pin VFBGA, W29N02GZBIBA

This image is representative of the product range

Bulk discount available

Subtotal (1 pack of 2 units)*

PHP1,062.24

(exc. VAT)

PHP1,189.70

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 114 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Pack*
2 - 8PHP531.12PHP1,062.24
10 - 18PHP515.18PHP1,030.36
20 - 48PHP499.725PHP999.45
50 - 98PHP484.73PHP969.46
100 +PHP470.19PHP940.38

*price indicative

Packaging Options:
RS Stock No.:
188-2874
Mfr. Part No.:
W29N02GZBIBA
Manufacturer:
Winbond
Find similar products by selecting one or more attributes.
Select all

Brand

Winbond

Product Type

Flash Memory

Memory Size

2GB

Interface Type

Parallel

Package Type

VFBGA

Pin Count

63

Organisation

256M x 8 Bit

Mount Type

Surface

Cell Type

SLC NAND

Maximum Supply Voltage

1.95V

Minimum Supply Voltage

1.7V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Standards/Approvals

No

Width

11.1 mm

Length

11.1mm

Height

0.6mm

Number of Bits per Word

8

Number of Words

256M

Automotive Standard

No

Series

W29N02GZ

Maximum Random Access Time

25μs

Supply Current

20mA

Density : 2Gbit (Single chip solution)

Vcc : 1.7V to 1.95V

Bus width : x8 x16

Operating temperature

Industrial: -40°C to 85°C

Industrial Plus: -40°C to 105°C

Single-Level Cell (SLC) technology.

Organization

Density: 2G-bit/256M-byte

Page size

2,112 bytes (2048 + 64 bytes)

1,056 words (1024 + 32 words)

Block size

64 pages (128K + 4K bytes)

64 pages (64K + 2K words)

Highest Performance

Read performance (Max.)

Random read: 25us

Sequential read cycle: 25ns

Write Erase performance

Page program time: 250us(typ.)

Block erase time: 2ms(typ.)

Endurance 100,000 Erase/Program Cycles(1)

10-years data retention

Command set

Standard NAND command

Additional command suppo

Copy Back

Two-plane operation

Contact Winbond for OTP f

Contact Winbond for Block

Lowest power consumption

Read: 13mA(typ.)

Program/Erase: 10mA(typ.)

CMOS standby: 10uA(typ.)

Space Efficient Packaging

48-pin standard TSOP1

63-ball VFBGA

2Gb SLC NAND Flash Memory with uniform 2KB+64B page size.

Bus Width: x8

Random Read: 25us

Page Program Time: 250us(typ.)

Block Erase Time: 2ms(typ.)

Support OTP Memory Area

Related links