onsemi NST65010MW6T1G Transistor, -100 mA PNP, -65 V, 6-Pin SOT-363
- RS Stock No.:
- 920-9887
- Mfr. Part No.:
- NST65010MW6T1G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 100 units)*
PHP819.80
(exc. VAT)
PHP918.20
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 100 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 100 - 400 | PHP8.198 | PHP819.80 |
| 500 - 900 | PHP7.952 | PHP795.20 |
| 1000 - 2400 | PHP7.475 | PHP747.50 |
| 2500 - 4900 | PHP6.803 | PHP680.30 |
| 5000 + | PHP5.986 | PHP598.60 |
*price indicative
- RS Stock No.:
- 920-9887
- Mfr. Part No.:
- NST65010MW6T1G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -100mA | |
| Maximum Collector Emitter Voltage Vceo | -65V | |
| Package Type | SOT-363 | |
| Mount Type | Surface | |
| Transistor Configuration | Isolated | |
| Maximum Collector Base Voltage VCBO | -80V | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Power Dissipation Pd | 380mW | |
| Maximum Emitter Base Voltage VEBO | -5V | |
| Minimum DC Current Gain hFE | 0.9 | |
| Transistor Polarity | PNP | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 2.2mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -100mA | ||
Maximum Collector Emitter Voltage Vceo -65V | ||
Package Type SOT-363 | ||
Mount Type Surface | ||
Transistor Configuration Isolated | ||
Maximum Collector Base Voltage VCBO -80V | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Power Dissipation Pd 380mW | ||
Maximum Emitter Base Voltage VEBO -5V | ||
Minimum DC Current Gain hFE 0.9 | ||
Transistor Polarity PNP | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 2.2mm | ||
Automotive Standard AEC-Q101 | ||
Dual Matched Bipolar Transistors, ON Semiconductor
Pairs of NPN or PNP bipolar transistors in a single package matched for Base-Emitter voltage (VBE) and Current Gain (hFE).
Related links
- onsemi Transistor -65 V, 6-Pin SOT-363
- Nexperia BC856BS -100 mA PNP 6-Pin SOT-363
- Nexperia Transistor -65 V, 6-Pin SOT-363
- Nexperia BCM856BS -100 mA PNP 6-Pin SOT-363
- Nexperia Transistor 65 V, 6-Pin SOT-363
- Nexperia BC846BPN 100 mA NPN + PNP 6-Pin SOT-363
- onsemi Transistor -65 V, 6-Pin SOT-363
- onsemi BC856BDW1T1G Transistor -65 V, 6-Pin SOT-363