Nexperia PBHV9115Z,115 Transistor, -1 A PNP, -150 V, 4-Pin SOT-223
- RS Stock No.:
- 816-0652
- Mfr. Part No.:
- PBHV9115Z,115
- Manufacturer:
- Nexperia
Currently unavailable
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- RS Stock No.:
- 816-0652
- Mfr. Part No.:
- PBHV9115Z,115
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -1A | |
| Maximum Collector Emitter Voltage Vceo | -150V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -200V | |
| Maximum Transition Frequency ft | 100MHz | |
| Transistor Polarity | PNP | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 100 | |
| Maximum Emitter Base Voltage VEBO | -6V | |
| Maximum Power Dissipation Pd | 1.4W | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Series | PBHV9115Z | |
| Height | 1.8mm | |
| Length | 6.7mm | |
| Width | 7.3 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -1A | ||
Maximum Collector Emitter Voltage Vceo -150V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -200V | ||
Maximum Transition Frequency ft 100MHz | ||
Transistor Polarity PNP | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 100 | ||
Maximum Emitter Base Voltage VEBO -6V | ||
Maximum Power Dissipation Pd 1.4W | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Series PBHV9115Z | ||
Height 1.8mm | ||
Length 6.7mm | ||
Width 7.3 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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