Nexperia PBSS8110X,135 NPN Transistor, 1 A, 100 V, 3-Pin SOT-89
- RS Stock No.:
- 801-5643
- Mfr. Part No.:
- PBSS8110X,135
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP458.15
(exc. VAT)
PHP513.125
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 3,975 unit(s) shipping from June 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP18.326 | PHP458.15 |
| 50 - 225 | PHP17.776 | PHP444.40 |
| 250 - 475 | PHP17.243 | PHP431.08 |
| 500 - 975 | PHP16.725 | PHP418.13 |
| 1000 + | PHP16.223 | PHP405.58 |
*price indicative
- RS Stock No.:
- 801-5643
- Mfr. Part No.:
- PBSS8110X,135
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 1 A | |
| Maximum Collector Emitter Voltage | 100 V | |
| Package Type | SOT-89 | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 2 W | |
| Minimum DC Current Gain | 150 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 120 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Maximum Operating Frequency | 100 MHz | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 4.6 x 2.6 x 1.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Transistor Type NPN | ||
Maximum DC Collector Current 1 A | ||
Maximum Collector Emitter Voltage 100 V | ||
Package Type SOT-89 | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 2 W | ||
Minimum DC Current Gain 150 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 120 V | ||
Maximum Emitter Base Voltage 5 V | ||
Maximum Operating Frequency 100 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Dimensions 4.6 x 2.6 x 1.6mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- HK
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
Bipolar Transistors, Nexperia