Nexperia PBSS8110X,135 Transistor, 1 A NPN, 100 V, 3-Pin SOT-89
- RS Stock No.:
- 801-5643
- Mfr. Part No.:
- PBSS8110X,135
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP458.15
(exc. VAT)
PHP513.125
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2,425 unit(s) shipping from March 30, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP18.326 | PHP458.15 |
| 50 - 225 | PHP17.776 | PHP444.40 |
| 250 - 475 | PHP17.243 | PHP431.08 |
| 500 - 975 | PHP16.725 | PHP418.13 |
| 1000 + | PHP16.223 | PHP405.58 |
*price indicative
- RS Stock No.:
- 801-5643
- Mfr. Part No.:
- PBSS8110X,135
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 1A | |
| Maximum Collector Emitter Voltage Vceo | 100V | |
| Package Type | SOT-89 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 120V | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -65°C | |
| Minimum DC Current Gain hFE | 80 | |
| Transistor Polarity | NPN | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 4.6mm | |
| Height | 1.6mm | |
| Series | PBSS8110X | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 1A | ||
Maximum Collector Emitter Voltage Vceo 100V | ||
Package Type SOT-89 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 120V | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -65°C | ||
Minimum DC Current Gain hFE 80 | ||
Transistor Polarity NPN | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 4.6mm | ||
Height 1.6mm | ||
Series PBSS8110X | ||
Automotive Standard No | ||
- COO (Country of Origin):
- HK
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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