onsemi MJD253T4G Transistor, -4 A PNP, -100 V, 3-Pin DPAK
- RS Stock No.:
- 790-5337
- Mfr. Part No.:
- MJD253T4G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP220.40
(exc. VAT)
PHP246.80
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 550 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP22.04 | PHP220.40 |
| 20 - 40 | PHP21.813 | PHP218.13 |
| 50 - 90 | PHP21.561 | PHP215.61 |
| 100 - 190 | PHP21.334 | PHP213.34 |
| 200 + | PHP21.058 | PHP210.58 |
*price indicative
- RS Stock No.:
- 790-5337
- Mfr. Part No.:
- MJD253T4G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -4A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 100V dc | |
| Maximum Transition Frequency ft | 10MHz | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 12.5W | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 40 | |
| Maximum Emitter Base Voltage VEBO | 7V | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Series | MJD253 | |
| Length | 0.27mm | |
| Height | 0.63mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -4A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 100V dc | ||
Maximum Transition Frequency ft 10MHz | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 12.5W | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 40 | ||
Maximum Emitter Base Voltage VEBO 7V | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Series MJD253 | ||
Length 0.27mm | ||
Height 0.63mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
Related links
- onsemi Transistor -100 V, 3-Pin DPAK
- onsemi Transistor -100 V, 3-Pin DPAK
- onsemi MJD32CG Transistor 100 V, 3-Pin DPAK
- onsemi NJVMJD32CT4G Transistor -100 V, 3-Pin DPAK
- onsemi MJD42CT4G Transistor -100 V, 3-Pin DPAK
- onsemi MJD32CT4G Transistor 100 V, 3-Pin DPAK
- onsemi Transistor -100 V, 3-Pin DPAK
- onsemi MJD42CG Bipolar Transistor -100 V, 3-Pin DPAK