Nexperia PBSS9110T,215 Transistor, -1 A PNP, -100 V, 3-Pin SOT-23
- RS Stock No.:
- 518-2135
- Mfr. Part No.:
- PBSS9110T,215
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 25 units)*
PHP324.875
(exc. VAT)
PHP363.85
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 2,850 unit(s) shipping from March 30, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP12.995 | PHP324.88 |
| 50 - 100 | PHP12.348 | PHP308.70 |
| 125 - 225 | PHP11.802 | PHP295.05 |
| 250 - 475 | PHP11.354 | PHP283.85 |
| 500 + | PHP10.924 | PHP273.10 |
*price indicative
- RS Stock No.:
- 518-2135
- Mfr. Part No.:
- PBSS9110T,215
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -1A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 120V | |
| Maximum Power Dissipation Pd | 480mW | |
| Minimum DC Current Gain hFE | 125 | |
| Transistor Polarity | PNP | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Series | PBSS9110T | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -1A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 120V | ||
Maximum Power Dissipation Pd 480mW | ||
Minimum DC Current Gain hFE 125 | ||
Transistor Polarity PNP | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum Operating Temperature -65°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Series PBSS9110T | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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