Nexperia PBSS8110Z,135 Transistor, 1 A NPN, 100 V, 4-Pin SOT-223

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Subtotal (1 pack of 10 units)*

PHP221.70

(exc. VAT)

PHP248.30

(inc. VAT)

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  • 1,780 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
10 - 10PHP22.17PHP221.70
20 - 40PHP21.504PHP215.04
50 - 90PHP20.86PHP208.60
100 - 190PHP20.234PHP202.34
200 +PHP19.626PHP196.26

*price indicative

Packaging Options:
RS Stock No.:
518-2107
Mfr. Part No.:
PBSS8110Z,135
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

Transistor

Maximum DC Collector Current Idc

1A

Maximum Collector Emitter Voltage Vceo

100V

Package Type

SOT-223

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

120V

Minimum Operating Temperature

-65°C

Maximum Transition Frequency ft

100MHz

Transistor Polarity

NPN

Maximum Power Dissipation Pd

1.4W

Maximum Emitter Base Voltage VEBO

5V

Minimum DC Current Gain hFE

80

Maximum Operating Temperature

150°C

Pin Count

4

Standards/Approvals

No

Height

1.65mm

Series

PBSS8110Z

Length

6.7mm

Automotive Standard

No

COO (Country of Origin):
CN

Low Saturation Voltage NPN Transistors


A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia


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