Nexperia PBSS8110Z,135 Transistor, 1 A NPN, 100 V, 4-Pin SOT-223
- RS Stock No.:
- 518-2107
- Mfr. Part No.:
- PBSS8110Z,135
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
PHP175.25
(exc. VAT)
PHP196.28
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 2,490 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP17.525 | PHP175.25 |
| 20 - 40 | PHP16.999 | PHP169.99 |
| 50 - 90 | PHP16.49 | PHP164.90 |
| 100 - 190 | PHP15.995 | PHP159.95 |
| 200 + | PHP15.514 | PHP155.14 |
*price indicative
- RS Stock No.:
- 518-2107
- Mfr. Part No.:
- PBSS8110Z,135
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 1A | |
| Maximum Collector Emitter Voltage Vceo | 100V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 120V | |
| Maximum Transition Frequency ft | 100MHz | |
| Maximum Power Dissipation Pd | 1.4W | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 80 | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | PBSS8110Z | |
| Width | 7.3 mm | |
| Height | 1.65mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 1A | ||
Maximum Collector Emitter Voltage Vceo 100V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 120V | ||
Maximum Transition Frequency ft 100MHz | ||
Maximum Power Dissipation Pd 1.4W | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 80 | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series PBSS8110Z | ||
Width 7.3 mm | ||
Height 1.65mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.