Infineon BFP410H6327XTSA1 RF Bipolar Transistor, 40 mA NPN, 4.5 V, 4-Pin SOT-343

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Subtotal (1 reel of 3000 units)*

PHP50,775.00

(exc. VAT)

PHP56,868.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 +PHP16.925PHP50,775.00

*price indicative

RS Stock No.:
273-7297
Mfr. Part No.:
BFP410H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

RF Bipolar Transistor

Maximum DC Collector Current Idc

40mA

Maximum Collector Emitter Voltage Vceo

4.5V

Package Type

SOT-343

Mount Type

Surface

Transistor Configuration

NPN

Maximum Collector Base Voltage VCBO

13V

Transistor Polarity

NPN

Minimum Operating Temperature

-55°C

Maximum Transition Frequency ft

25GHz

Maximum Power Dissipation Pd

150mW

Minimum DC Current Gain hFE

60

Maximum Emitter Base Voltage VEBO

1.5V

Pin Count

4

Maximum Operating Temperature

150°C

Series

BFP

Standards/Approvals

JEDEC47/20/22

Automotive Standard

No

The Infineon NPN RF bipolar transistor is a low noise device based on a grounded emitter that is part of Infineon established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz and low current characteristics make the device suitable for high frequency oscillators. It remains cost competitive without compromising on ease of use.

High gain

Minimum noise figure

Suitable for broadband low noise amplifiers

LNAs for sub 1 GHz ISM band applications

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