Toshiba TBC847B,LM(T Bipolar Transistor, 200 mA NPN, 50 V, 3-Pin SOT-23

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Subtotal (1 pack of 500 units)*

PHP1,138.50

(exc. VAT)

PHP1,275.00

(inc. VAT)

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  • 40,500 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
500 - 500PHP2.277PHP1,138.50
1000 - 1000PHP2.049PHP1,024.50
1500 - 2500PHP2.008PHP1,004.00
3000 +PHP1.863PHP931.50

*price indicative

Packaging Options:
RS Stock No.:
236-3587
Mfr. Part No.:
TBC847B,LM(T
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

200mA

Maximum Collector Emitter Voltage Vceo

50V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

60V

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

6V

Minimum DC Current Gain hFE

200

Transistor Polarity

NPN

Maximum Power Dissipation Pd

320mW

Pin Count

3

Maximum Operating Temperature

150°C

Series

TBC847

Standards/Approvals

No

Width

2.4 mm

Length

2.9mm

Height

0.95mm

Automotive Standard

No

The Toshiba bipolar transistor MADE up of the silicon material and having NPN epitaxial type. It is mainly used in low frequency amplifiers.

Storage temperature range −55 to 150 °C

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