Toshiba Bipolar Transistor, 200 mA NPN, 50 V, 3-Pin SOT-23
- RS Stock No.:
- 236-3586
- Mfr. Part No.:
- TBC847B,LM(T
- Manufacturer:
- Toshiba
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PHP4,560.00
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PHP5,100.00
(inc. VAT)
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In Stock
- 39,000 unit(s) ready to ship from another location
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Units | Per Unit | Per Reel* |
|---|---|---|
| 3000 + | PHP1.52 | PHP4,560.00 |
*price indicative
- RS Stock No.:
- 236-3586
- Mfr. Part No.:
- TBC847B,LM(T
- Manufacturer:
- Toshiba
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 200mA | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 60V | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 200 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 320mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Series | TBC847 | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Width | 2.4 mm | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 200mA | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 60V | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 200 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 320mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Series TBC847 | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Width 2.4 mm | ||
Height 0.95mm | ||
Automotive Standard No | ||
The Toshiba bipolar transistor MADE up of the silicon material and having NPN epitaxial type. It is mainly used in low frequency amplifiers.
Storage temperature range −55 to 150 °C
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