onsemi Digital Transistor N-Channel Through Hole TO-3P, 3-Pin
- RS Stock No.:
- 186-8132P
- Mfr. Part No.:
- FDA59N30
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal 10 units (supplied in a tube)*
PHP2,718.78
(exc. VAT)
PHP3,045.03
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 510 unit(s) shipping from July 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 10 + | PHP271.878 |
*price indicative
- RS Stock No.:
- 186-8132P
- Mfr. Part No.:
- FDA59N30
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Transistor Polarity | N-Channel | |
| Maximum Power Dissipation Pd | 500W | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Standards/Approvals | No | |
| Height | 18.9mm | |
| Length | 16.2mm | |
| Series | UniFETTM | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Transistor Polarity N-Channel | ||
Maximum Power Dissipation Pd 500W | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Standards/Approvals No | ||
Height 18.9mm | ||
Length 16.2mm | ||
Series UniFETTM | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
RDS(on) = 56mΩ ( Max.)@ VGS = 10V, ID = 29.5A
Low gate charge ( Typ. 77nC)
Low Crss ( Typ. 80pF)
Applications
This product is general usage and suitable for many different applications.
Related links
- onsemi Digital Transistor N-Channel Through Hole TO-3P, 3-Pin
- onsemi FDA59N30 Digital Transistor N-Channel Through Hole TO-3P, 3-Pin
- onsemi FDA38N30 Digital Transistor N-Channel Through Hole TO-3P, 3-Pin
- onsemi Digital Transistor N-Channel Through Hole TO-220, 3-Pin
- onsemi Digital Transistor N-Channel Through Hole TO-92, 3-Pin
- onsemi Digital Transistor N-Channel Surface SOT-23, 3-Pin
- onsemi Digital Transistor N-Channel Surface SOT-223, 3-Pin
- onsemi Digital Transistor N-Channel 2.6 A Surface SOT-223, 3-Pin
