onsemi MJB45H11G Digital Transistor, -80 V PNP 10 A Surface, 2-Pin

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Subtotal 20 units (supplied in a tube)*

PHP1,162.80

(exc. VAT)

PHP1,302.40

(inc. VAT)

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  • 120 unit(s) ready to ship from another location
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Per Unit
20 +PHP58.14

*price indicative

Packaging Options:
RS Stock No.:
186-8019P
Mfr. Part No.:
MJB45H11G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Maximum Collector Emitter Voltage Vceo

-80V

Mount Type

Surface

Transistor Configuration

Single

Maximum Emitter Base Voltage VEBO

5V dc

Maximum Collector Emitter Saturation Voltage VceSAT

1V

Maximum Power Dissipation Pd

50W

Maximum Continuous Collector Current Ic

10A

Transistor Polarity

PNP

Minimum DC Current Gain hFE

60

Pin Count

2

Maximum Operating Temperature

150°C

Standards/Approvals

UL 94 V-0

Series

MJB45H

Height

8.64mm

Width

4.83mm

Length

9.65mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.

Low Collector-Emitter Saturation Voltage -

VCE(sat) = 1.0 V (Max) @ 8.0 A

Fast Switching Speeds

Complementary Pairs Simplifies Designs

NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

PbFree Packages are Available

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