Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Transistor Type	PNP
	Maximum DC Collector Current	-15 A
	Maximum Collector Emitter Voltage	-60 V
	Package Type	SOT-93
	Mounting Type	Through Hole
	Maximum Power Dissipation	90 W
	Minimum DC Current Gain	20
	Transistor Configuration	Single
	Maximum Collector Base Voltage	100 V dc
	Maximum Emitter Base Voltage	7 V dc
	Maximum Operating Frequency	1 MHz
	Pin Count	3
	Number of Elements per Chip	1
	Dimensions	15.2 x 4.9 x 20.35mm
	Maximum Operating Temperature	+150 °C

	Select all
	Brand onsemi
	Transistor Type PNP
	Maximum DC Collector Current -15 A
	Maximum Collector Emitter Voltage -60 V
	Package Type SOT-93
	Mounting Type Through Hole
	Maximum Power Dissipation 90 W
	Minimum DC Current Gain 20
	Transistor Configuration Single
	Maximum Collector Base Voltage 100 V dc
	Maximum Emitter Base Voltage 7 V dc
	Maximum Operating Frequency 1 MHz
	Pin Count 3
	Number of Elements per Chip 1
	Dimensions 15.2 x 4.9 x 20.35mm
	Maximum Operating Temperature +150 °C

Datasheet TIP2955G

COO (Country of Origin):: CN

The Bipolar Power Transistor is designed for general purpose switching and amplifier applications. The TIP3055 (NPN), and TIP2955 (PNP) are complementary devices.

DC Current Gain hFE = 20-70 @ IC hFE = 4.0 Adc
Collector-Emitter Saturation Voltage
VCE(sat) = 1.1 Vdc (Max) @ IC
VCE(sat) = 4.0 Adc
Excellent Safe Operating Area

onsemi TIP2955G PNP Transistor, -15 A, -60 V, 3-Pin SOT-93

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