onsemi Digital Transistor, -200 V PNP Through Hole SOT-93, 3-Pin

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Subtotal (1 tube of 30 units)*

PHP6,384.00

(exc. VAT)

PHP7,150.20

(inc. VAT)

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  • 150 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
30 - 30PHP212.80PHP6,384.00
60 - 90PHP212.686PHP6,380.58
120 - 270PHP184.635PHP5,539.05
300 - 420PHP174.701PHP5,241.03
450 +PHP171.20PHP5,136.00

*price indicative

RS Stock No.:
186-7418
Mfr. Part No.:
MJH11019G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Digital Transistor

Package Type

SOT-93

Maximum Collector Emitter Voltage Vceo

-200V

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

150V

Maximum Power Dissipation Pd

150W

Maximum Emitter Base Voltage VEBO

5V

Minimum DC Current Gain hFE

100

Transistor Polarity

PNP

Pin Count

3

Maximum Operating Temperature

150°C

Length

15.2mm

Width

4.9 mm

Height

20.35mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11017, MJH11019, MJH11021 (PNP), MJH11018, MJH11020, MJH11022 (NPN) are complementary devices.

High DC Current Gain @ 10 Adc - hFE = 400 Min (All Types)

Collector-Emitter Sustaining Voltage VCEO(sus) = 150 Vdc (Min) MJH11018, 17 VCEO(sus) = 200 Vdc (Min) - MJH11020, 19 VCEO(sus) = 250 Vdc (Min) - MJH11022, 21

Low Collector-Emitter Saturation Voltage VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A VCE(sat) = 1.8 V (Typ) @ IC = 10 A

Monolithic Construction

Pb-Free Packages are Available

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