Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Transistor Type	PNP
	Maximum Collector Emitter Voltage	-30 V
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Maximum Power Dissipation	710 mW
	Minimum DC Current Gain	100
	Transistor Configuration	Single
	Maximum Emitter Base Voltage	-5 V dc
	Pin Count	3
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Dimensions	3.04 x 1.4 x 1.01mm

	Select all
	Brand onsemi
	Transistor Type PNP
	Maximum Collector Emitter Voltage -30 V
	Package Type SOT-23
	Mounting Type Surface Mount
	Maximum Power Dissipation 710 mW
	Minimum DC Current Gain 100
	Transistor Configuration Single
	Maximum Emitter Base Voltage -5 V dc
	Pin Count 3
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Dimensions 3.04 x 1.4 x 1.01mm

Datasheet MMBT589LT1G

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

Low rDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT-23 Surface Mount Package Saves Board Space
Pb-Free Packages are Available
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable

onsemi MMBT589LT1G PNP Digital Transistor, -30 V, 3-Pin SOT-23

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

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