onsemi 2SA2210-1E PNP Transistor, -20 A, -50 V, 3-Pin TO-220F
- RS Stock No.:
- 184-4925P
- Mfr. Part No.:
- 2SA2210-1E
- Manufacturer:
- onsemi
Bulk discount available
Subtotal 25 units (supplied in a tube)*
PHP2,671.25
(exc. VAT)
PHP2,991.75
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 25 unit(s) shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 25 + | PHP106.85 |
*price indicative
- RS Stock No.:
- 184-4925P
- Mfr. Part No.:
- 2SA2210-1E
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Transistor Type | PNP | |
| Maximum DC Collector Current | -20 A | |
| Maximum Collector Emitter Voltage | -50 V | |
| Package Type | TO-220F | |
| Mounting Type | Through Hole | |
| Maximum Power Dissipation | 30 W | |
| Minimum DC Current Gain | 150 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | -50 V | |
| Maximum Emitter Base Voltage | -6 V | |
| Maximum Operating Frequency | 1 MHz | |
| Pin Count | 3 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 10.16 x 4.7 x 15.87mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Transistor Type PNP | ||
Maximum DC Collector Current -20 A | ||
Maximum Collector Emitter Voltage -50 V | ||
Package Type TO-220F | ||
Mounting Type Through Hole | ||
Maximum Power Dissipation 30 W | ||
Minimum DC Current Gain 150 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage -50 V | ||
Maximum Emitter Base Voltage -6 V | ||
Maximum Operating Frequency 1 MHz | ||
Pin Count 3 | ||
Number of Elements per Chip 1 | ||
Dimensions 10.16 x 4.7 x 15.87mm | ||
Maximum Operating Temperature +150 °C | ||
- COO (Country of Origin):
- KR
2SA2210 is a Bipolar Transistor, -50V, -20A, Low VCE(sat), PNP TO-220F-3SG for High-Current Switching Applications.
Adoption of MBIT process
Large current capacitance
Low collector to emitter saturation voltage
High speed switching
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