onsemi MJE200G Transistor, 10 A NPN, 40 V, 3-Pin TO-225

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Subtotal 75 units (supplied in a box)*

PHP2,820.15

(exc. VAT)

PHP3,158.55

(inc. VAT)

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  • 725 unit(s) ready to ship from another location
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Units
Per Unit
75 - 100PHP37.602
125 - 225PHP33.848
250 - 350PHP30.792
375 +PHP28.234

*price indicative

Packaging Options:
RS Stock No.:
184-4894P
Mfr. Part No.:
MJE200G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

10A

Maximum Collector Emitter Voltage Vceo

40V

Package Type

TO-225

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

25V dc

Maximum Emitter Base Voltage VEBO

8V dc

Minimum DC Current Gain hFE

10

Transistor Polarity

NPN

Maximum Power Dissipation Pd

15W

Maximum Transition Frequency ft

10MHz

Maximum Operating Temperature

150°C

Pin Count

3

Series

MJE200

Height

27.1mm

Standards/Approvals

No

Width

3.25mm

Length

8mm

Automotive Standard

No

COO (Country of Origin):
CN
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

High DC Current Gain

Low Collector-Emitter Saturation Voltage

High Current-Gain - Bandwidth Product

Annular Construction for Low Leakage

These Devices are Pb-Free

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