MPN

onsemi Transistor, 40 A NPN, 100 V dc, 3-Pin TO-204

Name: onsemi Transistor, 40 A NPN, 100 V dc, 3-Pin TO-204
Brand: onsemi
SKU: 184-4703P
Price: 299.925 PHP
Availability: BackOrder

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Subtotal 50 units (supplied in a box)*

PHP14,996.25

(exc. VAT)

PHP16,795.80

(inc. VAT)

Temporarily out of stock

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Units	Per Unit
50 +	PHP299.925

*price indicative

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	onsemi
	Product Type	Transistor
	Maximum DC Collector Current Idc	40A
	Maximum Collector Emitter Voltage Vceo	100V dc
	Package Type	TO-204
	Mount Type	Through Hole
	Transistor Configuration	Single
	Maximum Collector Base Voltage VCBO	100V dc
	Maximum Emitter Base Voltage VEBO	5V dc
	Transistor Polarity	NPN
	Minimum DC Current Gain hFE	100
	Maximum Transition Frequency ft	1MHz
	Maximum Power Dissipation Pd	160W
	Minimum Operating Temperature	-65°C
	Maximum Operating Temperature	200°C
	Pin Count	3
	Length	39.37mm
	Series	2N6284
	Width	26.67mm
	Standards/Approvals	No
	Height	20.7mm
	Automotive Standard	No

	Select all
	Brand onsemi
	Product Type Transistor
	Maximum DC Collector Current Idc 40A
	Maximum Collector Emitter Voltage Vceo 100V dc
	Package Type TO-204
	Mount Type Through Hole
	Transistor Configuration Single
	Maximum Collector Base Voltage VCBO 100V dc
	Maximum Emitter Base Voltage VEBO 5V dc
	Transistor Polarity NPN
	Minimum DC Current Gain hFE 100
	Maximum Transition Frequency ft 1MHz
	Maximum Power Dissipation Pd 160W
	Minimum Operating Temperature -65°C
	Maximum Operating Temperature 200°C
	Pin Count 3
	Length 39.37mm
	Series 2N6284
	Width 26.67mm
	Standards/Approvals No
	Height 20.7mm
	Automotive Standard No

The Power 20A 100 V PNP Darlington Transistors is designed for general-purpose amplifier and low-frequency switching applications.

High DC Current Gain @ IC = 10 Adc

hFE = 2400 (Typ) - 2N6284

hFE = 4000 (Typ) - 2N6287

Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min)

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

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