onsemi Transistor, 10 A NPN, 40 V, 3-Pin TO-225
- RS Stock No.:
- 184-4314
- Mfr. Part No.:
- MJE200G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 box of 500 units)*
PHP10,780.00
(exc. VAT)
PHP12,075.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 500 unit(s) shipping from March 27, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Box* |
|---|---|---|
| 500 - 2000 | PHP21.56 | PHP10,780.00 |
| 2500 - 4500 | PHP20.019 | PHP10,009.50 |
| 5000 + | PHP18.683 | PHP9,341.50 |
*price indicative
- RS Stock No.:
- 184-4314
- Mfr. Part No.:
- MJE200G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | TO-225 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 25V | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 15W | |
| Maximum Transition Frequency ft | 10MHz | |
| Minimum DC Current Gain hFE | 10 | |
| Maximum Emitter Base Voltage VEBO | 8V | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Length | 8mm | |
| Height | 27.1mm | |
| Series | MJE200 | |
| Width | 3.25 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type TO-225 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 25V | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 15W | ||
Maximum Transition Frequency ft 10MHz | ||
Minimum DC Current Gain hFE 10 | ||
Maximum Emitter Base Voltage VEBO 8V | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Length 8mm | ||
Height 27.1mm | ||
Series MJE200 | ||
Width 3.25 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free