onsemi 2N6043G Transistor, 8 A NPN, 60 V dc, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP1,658.70

(exc. VAT)

PHP1,857.75

(inc. VAT)

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Last RS stock
  • Final 400 unit(s), ready to ship from another location
Units
Per Unit
Per Tube*
50 - 450PHP33.174PHP1,658.70
500 - 950PHP32.179PHP1,608.95
1000 +PHP31.213PHP1,560.65

*price indicative

RS Stock No.:
184-4152
Mfr. Part No.:
2N6043G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

Transistor

Maximum DC Collector Current Idc

8A

Maximum Collector Emitter Voltage Vceo

60V dc

Package Type

TO-220

Mount Type

Through Hole

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

60V dc

Maximum Power Dissipation Pd

75W

Maximum Transition Frequency ft

1MHz

Transistor Polarity

NPN

Minimum DC Current Gain hFE

1000

Minimum Operating Temperature

-65°C

Maximum Emitter Base Voltage VEBO

5V dc

Pin Count

3

Maximum Operating Temperature

150°C

Width

4.83 mm

Length

10.53mm

Height

30.02mm

Series

2N6043

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The 8 A, 100 V NPN Darlington Bipolar Power Transistor is designed for general-purpose amplifier and low-speed switching applications. 2N6040, 2N6042 (PNP), and 2N6043, 2N6045 (NPN) are complementary devices.

High DC Current Gain -hFE = 2500 (Typ) @ IC = 4.0 Adc

Collector-Emitter Sustaining Voltage - @ 100 mAdc -VCEO(sus) = 60 Vdc (Min) - 2N6040, 2N6043VCEO(sus)= 80 Vdc (Min) - 2N6041, 2N6044VCEO(sus)= 100 Vdc (Min) - 2N6042, 2N6045

Low Collector-Emitter Saturation Voltage -VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc - 2N6040,41, 2N6043,44VCE(sat)= 2.0 Vdc (Max) @ IC = 3.0 Adc - 2N6042, 2N6045

Monolithic Construction with Built-In Base-Emitter Shunt Resistors

Pb-Free Packages are Available

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