onsemi MJF45H11G Transistor, -10 A PNP, -80 V, 3-Pin TO-220
- RS Stock No.:
- 184-1139
- Mfr. Part No.:
- MJF45H11G
- Manufacturer:
- onsemi
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
PHP533.12
(exc. VAT)
PHP597.095
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 130 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP106.624 | PHP533.12 |
| 25 + | PHP95.948 | PHP479.74 |
*price indicative
- RS Stock No.:
- 184-1139
- Mfr. Part No.:
- MJF45H11G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Isolated | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 20MHz | |
| Transistor Polarity | PNP | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Power Dissipation Pd | 36W | |
| Minimum DC Current Gain hFE | 40 | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.19 mm | |
| Length | 0.42mm | |
| Height | 1.18mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Isolated | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 20MHz | ||
Transistor Polarity PNP | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Power Dissipation Pd 36W | ||
Minimum DC Current Gain hFE 40 | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Width 0.19 mm | ||
Length 0.42mm | ||
Height 1.18mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
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