onsemi MJF45H11G Transistor, -10 A PNP, -80 V, 3-Pin TO-220
- RS Stock No.:
- 184-1139
- Mfr. Part No.:
- MJF45H11G
- Manufacturer:
- onsemi
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
PHP533.12
(exc. VAT)
PHP597.095
(inc. VAT)
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In Stock
- Plus 85 unit(s) shipping from April 27, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP106.624 | PHP533.12 |
| 25 + | PHP95.948 | PHP479.74 |
*price indicative
- RS Stock No.:
- 184-1139
- Mfr. Part No.:
- MJF45H11G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Isolated | |
| Maximum Transition Frequency ft | 20MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum DC Current Gain hFE | 40 | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 36W | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.18mm | |
| Length | 0.42mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Isolated | ||
Maximum Transition Frequency ft 20MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum DC Current Gain hFE 40 | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 36W | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.18mm | ||
Length 0.42mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
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