Nexperia PBSS4480X,135 NPN Transistor, 4 A, 80 V, 4-Pin UPAK
- RS Stock No.:
- 166-0256
- Mfr. Part No.:
- PBSS4480X,135
- Manufacturer:
- Nexperia
This image is representative of the product range
Subtotal (1 reel of 4000 units)*
PHP53,904.00
(exc. VAT)
PHP60,372.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 4,000 unit(s) shipping from July 22, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 4000 + | PHP13.476 | PHP53,904.00 |
*price indicative
- RS Stock No.:
- 166-0256
- Mfr. Part No.:
- PBSS4480X,135
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Transistor Type | NPN | |
| Maximum DC Collector Current | 4 A | |
| Maximum Collector Emitter Voltage | 80 V | |
| Package Type | UPAK | |
| Mounting Type | Surface Mount | |
| Maximum Power Dissipation | 2.5 W | |
| Minimum DC Current Gain | 250 | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage | 80 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Maximum Operating Frequency | 150 MHz | |
| Pin Count | 4 | |
| Number of Elements per Chip | 1 | |
| Dimensions | 1.6 x 4.6 x 2.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Transistor Type NPN | ||
Maximum DC Collector Current 4 A | ||
Maximum Collector Emitter Voltage 80 V | ||
Package Type UPAK | ||
Mounting Type Surface Mount | ||
Maximum Power Dissipation 2.5 W | ||
Minimum DC Current Gain 250 | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage 80 V | ||
Maximum Emitter Base Voltage 5 V | ||
Maximum Operating Frequency 150 MHz | ||
Pin Count 4 | ||
Number of Elements per Chip 1 | ||
Dimensions 1.6 x 4.6 x 2.6mm | ||
Maximum Operating Temperature +150 °C | ||
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
Bipolar Transistors, Nexperia