onsemi MMBT5550LT1G NPN High Voltage Transistor, 600 mA NPN, 140 V dc, 3-Pin SOT-23

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Subtotal (1 tape of 200 units)*

PHP209.40

(exc. VAT)

PHP234.60

(inc. VAT)

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Units
Per Unit
Per Tape*
200 - 1800PHP1.047PHP209.40
2000 - 4800PHP1.023PHP204.60
5000 - 19800PHP0.996PHP199.20
20000 +PHP0.931PHP186.20

*price indicative

Packaging Options:
RS Stock No.:
765-318
Mfr. Part No.:
MMBT5550LT1G
Manufacturer:
onsemi
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Brand

onsemi

Product Type

NPN High Voltage Transistor

Maximum DC Collector Current Idc

600mA

Maximum Collector Emitter Voltage Vceo

140V dc

Package Type

SOT-23

Mount Type

Surface Mount

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

160V dc

Minimum Operating Temperature

-55°C

Maximum Emitter Base Voltage VEBO

6V dc

Maximum Power Dissipation Pd

225mW

Transistor Polarity

NPN

Minimum DC Current Gain hFE

60

Maximum Operating Temperature

150°C

Pin Count

3

Height

1.01mm

Standards/Approvals

RoHS Compliant

Width

1.4mm

Series

MMBT5550L

Length

3.04mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The onsemi NPN silicon transistor designed for applications requiring high voltage capabilities. With an impressive collector-emitter voltage rating of 140V, this device is engineered for optimum reliability in automotive and other industrial applications demanding stringent performance standards. Its Pb-free and halogen-free construction further reflects its compatibility with contemporary environmental regulations, ensuring compliance without compromising quality. Optimized for continuous collector currents of up to 600mA, this transistor excels in high-speed switching operations, offering minimal delays and enhanced efficiency for various electronic circuits.

High voltage capability with collector-emitter voltage ratings up to 140V

Designed for a continuous collector current of 600mA, supporting demanding applications

Pb-free and halogen-free construction complies with RoHS standards, promoting environmental safety

AEC-Q101 qualified, ensuring reliability in automotive and critical applications

Optimised for fast switching speeds, facilitating efficient circuit operation

Low collector-emitter saturation voltage, enhancing overall energy efficiency

Enhanced thermal stability with low thermal resistance, improving performance in high-temperature environments

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