STMicroelectronics 2STN1360 Transistor, 3 A NPN, 60 V, 4-Pin SOT-223
- RS Stock No.:
- 151-434
- Mfr. Part No.:
- 2STN1360
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Subtotal (1 reel of 1000 units)*
PHP11,210.00
(exc. VAT)
PHP12,560.00
(inc. VAT)
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Units | Per Unit | Per Reel* |
|---|---|---|
| 1000 + | PHP11.21 | PHP11,210.00 |
*price indicative
- RS Stock No.:
- 151-434
- Mfr. Part No.:
- 2STN1360
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 3A | |
| Maximum Collector Emitter Voltage Vceo | 60V | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 80V | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Minimum Operating Temperature | -60°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Minimum DC Current Gain hFE | 80 | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 2.29mm | |
| Height | 4.4mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 3A | ||
Maximum Collector Emitter Voltage Vceo 60V | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 80V | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Minimum Operating Temperature -60°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Minimum DC Current Gain hFE 80 | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 2.29mm | ||
Height 4.4mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics NPN transistor is manufactured using new low voltage Planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance coupled with very low saturation voltage.
High current gain characteristic
Fast switching speed
Can be used in emergency lighting and voltage regulation applications
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