Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	onsemi
	Direction Type	Bi-Directional
	Product Type	TVS Diode
	Minimum Breakdown Voltage Vbr	25.7V
	Mount Type	Surface
	Package Type	SOT-23
	Pin Count	3
	Peak Pulse Power Dissipation Pppm	350W
	Clamping Voltage VC	40V
	ESD Protection	Yes
	Maximum Peak Pulse Current Ippm	8A
	Test Current It	1mA
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Number of Elements per Chip	2
	Width	1.4 mm
	Standards/Approvals	No
	Height	1.01mm
	Length	3.04mm
	Automotive Standard	AEC-Q101
	Maximum Reverse Leakage Current	100nA

	Select all
	Brand onsemi
	Direction Type Bi-Directional
	Product Type TVS Diode
	Minimum Breakdown Voltage Vbr 25.7V
	Mount Type Surface
	Package Type SOT-23
	Pin Count 3
	Peak Pulse Power Dissipation Pppm 350W
	Clamping Voltage VC 40V
	ESD Protection Yes
	Maximum Peak Pulse Current Ippm 8A
	Test Current It 1mA
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Number of Elements per Chip 2
	Width 1.4 mm
	Standards/Approvals No
	Height 1.01mm
	Length 3.04mm
	Automotive Standard AEC-Q101
	Maximum Reverse Leakage Current 100nA

Datasheet NUP1105LT1G

COO (Country of Origin):: CN

The NUP1105L has been designed to protect LIN and single line CAN transceivers from ESD and other harmful surge events. This device provides bidirectional protection for the data line with a single SOT−23 package, giving the system designer a low cost option for improving system reliability.

SOT-23 Package Allows One Separate Bidirectional Configuration

350 W Peak Power Dissipation per Line (8 x 20 usec Waveform)

Low Reverse Leakage Current (< 100 nA)

onsemi 2-Element Bi-Directional TVS Diode, 350 W, 3-Pin SOT-23

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